Results are presented for simulations of a verification process for noise-parameter measurements. The verification process consists of first measuring separately both a passive device and the amplifier or transistor of interest (the DUT) and then measuring the tandem configuration of passive device plus DUT. The results of the measurements of the tandem configuration are then compared to the predictions obtained by cascading the noise parameters and S-parameters of the two individual components. In order that the comparisons be meaningful, uncertainties are computed for both predictions and simulated measurements.
Proceedings Title: ARFTG 70TH MICROWAVE MEASUREMENT SYMPOSIUM
Conference Dates: November 27-30, 2007
Conference Location: Tempe, AZ
Pub Type: Conferences
Amplifier noise, measurement uncertainties, noise measurements, noise parameters, transistor noise, verification methods.