Publications

Displaying 426 - 433 of 433

Characterization of InGaAs quantum dot lasers with a single quantum dot layer as an active region

July 4, 1998

Author(s)

Richard P. Mirin, A C. Gossard, J. E. Bowers

Quantum dot lasers with an active region consisting of just a single quantum dot layer have been grown using molecular beam epitaxy and characterized from 80 to 300 K. The quantum dot lasers lase from excited states over the entire temperature range. The

High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation

May 25, 1998

Author(s)

M. S. {Umlat}nl{umlat}, M. Gvkkavas, B. M. Onat, E. Ata, E. Vzbay, Richard Mirin, K. J. Knopp, Kristine A. Bertness, David H. Christensen

High-speed resonant cavity enhanced Schottky photodiodes operating in 800-850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs mate1ial system. The Schottky contact is a semitransparent Au film which also serves as the

High bandwidth-efficiency GaAs Schottky photodiodes for 840 nm operation wavelength

December 1, 1997

Author(s)

E. Ata, M. Gvkkavas, B. M. Onat, M R. Islam, G. Tuttle, Richard Mirin, K. J. Knopp, Kristine A. Bertness, David H. Christensen, M. S. {Umlat}nl{umlat}, E. Vzbay

Characterization and modeling of InGaAs quantum dot lasers

August 1, 1997

Author(s)

Richard P. Mirin, A C. Gossard, J. E. Bowers

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