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Search Publications by

Sergiy Krylyuk (Fed)

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Displaying 1 - 25 of 62

Rapid Phase Transition of Al2O3 Encapsulated MoTe2 via Thermal Annealing

July 19, 2022
Rohan Sengupta, Saroj Dangi, Sergiy Krylyuk, Albert Davydov, Spyridon Pavlidis
MoTe2 has gained a lot of attention recently as a potential phase change material candidate for low-power nonvolatile switches and high-density memory applications, due to the smallest predicted energy offset between its semiconducting 2H and semimetallic

Self-Driven Highly Responsive PN Junction InSe Heterostructure Near-Infrared Light Detector

June 30, 2022
Chandraman Patil, Chaobo Dong, Hao Wang, Hamed Dalir, Sergiy Krylyuk, Huairuo Zhang, Albert Davydov, Volker Sorger
Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to engineering the light

Electrochemically Assaying Dopamine with p-Doped Silicon Nanowires

March 14, 2022
Nawaraj Karki, Albert Davydov, Sergiy Krylyuk, Charles Chusuei
Neuroblastoma, a pediatric cancer, is characterized by high urinary excretion of dopamine (DA). Silicon nanowires (SiNWs), which are nontoxic and known to resist surface fouling in biological samples, were investigated for practical use as working

Spatially-resolved bandgap and dielectric function in two-dimensional materials from Electron Energy Loss Spectroscopy

February 15, 2022
Abel Brokkelkamp, Jaco ter Hoeve, Isabel Postmes, Sabrya van Heijst, Luigi Maduro, Albert Davydov, Sergiy Krylyuk, Juan Rojo, Sonia Conesa Boj
The electronic properties of two-dimensional (2D) materials depend sensitively on the underlying atomic arrangement down to the monolayer level. Here we present a novel strategy for the determination of the band gap and complex dielectric function in 2D

Thickness-dependent transport properties and photoresponse in MoSe2 field-effect transistors

February 4, 2022
Shiqi Guo, Sergiy Krylyuk, Hsin Y. Lee, Ratan K. Debnath, Albert Davydov, Mona E. Zaghloul
Transition metal dichalcogenides have been studied extensively due to their unique properties in low-dimensional limits. In this work, we have examined the effect of MoSe2 layer thickness on its electrical properties in a field effect transistor (FET)

Charge Density Wave Activated Excitons in MoSe2

January 5, 2022
Jaydeep Joshi, Benedikt Scharf, Igor Mazin, Sergiy Krylyuk, Daniel Campbell, Albert Davydov, Johnpierre Paglione, Igor Zutic, Patrick Vora
Layered materials enable the assembly of a new class of heterostructures where lattice-matching is no longer a requirement. Interfaces in these heterostructures therefore become a fertile ground for new physics as dissimilar phenomena can be coupled via

Low barrier height in a ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy

September 9, 2021
Yeonhoo Kim, Roxanne Tutchton, Ren Liu, Sergiy Krylyuk, Jian-Xin Zhu, Albert Davydov, Young Joon Hong, Jinkyoung Yoo
Two-dimensional (2D) materials as contacts for semiconductor devices have attracted great attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact

Mobility Extraction in 2D Transition Metal Dichalcogenide Devices - Avoiding Contact Resistance Implicated Overestimation

June 10, 2021
Chin-Sheng Pang, Ruiping Zhou, Xiangkai Liu, Peng Wu, Terry Y. Hung, Shiqi Guo, Mona E. Zaghloul, Sergiy Krylyuk, Albert Davydov, Joerg Appenzeller, Zhihong Chen
Schottky barrier (SB) transistors operate distinctly different from conventional metal-oxide semiconductor field-effect transistors (MOSFETs), in a unique way that the gate impacts the carrier injection from the metal source/drain contacts into the channel

Substrate-mediated hyperbolic phonon polaritons in MoO3

February 15, 2021
Jeffrey Schwartz, Son T. Le, Sergiy Krylyuk, Curt A. Richter, Albert Davydov, Andrea Centrone
Hyperbolic phonon polaritons (HPhPs) are hybrid excitations of light and coherent charge oscillations that exist in strongly optically anisotropic, two-dimensional materials (e.g., MoO3). These polaritons propagate through the material's volume with long

Thermomagnetic properties of Bi2Te3 single crystal in the temperature range from 55 K to 380 K

January 21, 2021
Md S. Akhanda, S. Emad Rezaei, Keivan Esfarjani, Sergiy Krylyuk, Albert Davydov, Mona Zebarjadi
Magneto-thermoelectric transport provides an understanding of coupled electron-hole-phonon current in topological materials and has applications in energy conversion and cooling. In this work, we investigate the effects of an external magnetic field (

Structural and magnetic properties of sputtered FePd thin films grown on MgO single-crystal substrates with oblique and normal substrate orientation

July 28, 2020
Xinjun Wang, Sergiy Krylyuk, Daniel Josell, Daniel Gopman, Jian-Ping Wang, Delin Zhang
Materials possessing perpendicular magnetic anisotropy derived from the intrinsic crystal structure, such as in L10 Fe-based alloys, have the potential to deliver superior scaling of magnetic memory elements compared to materials whose anisotropy is

Localized Excitons in NbSe2-MoSe2 Heterostructures

July 8, 2020
Jaydeep Joshi, Tong Zhou, Sergiy Krylyuk, Albert Davydov, Igor Zutic, Patrick M. Vora
Neutral and charged excitons (trions) in atomically-thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly-efficient lightemitting diodes and lasers. Recent studies of van der Waals (vdW) heterostructures

Photocurrent detection of the orbital angular momentum of light

May 15, 2020
Zhurun Ji, Wenjing Liu, Sergiy Krylyuk, Xiaopeng Fan, Zhifeng Zhang, Anlian Pan, Liang Feng, Albert Davydov, Ritesh Agarwal
Utilizing the orbital angular momentum (OAM) of light is promising for increasing the bandwidth of optical communication networks. However, direct photocurrent detection of different OAM modes has not yet been demonstrated. Most studies on current

In situ transport measurements reveal source of mobility enhancement of MoS2 and MoTe2 during dielectric deposition

April 21, 2020
Ju Ying Shang, Michael J. Moody, Jiazhen Chen, Sergiy Krylyuk, Albert Davydov, Tobin J. Marks, Lincoln J. Lauhon
Layered transition metal dichalcogenides (TMDs) and two-dimensional (2D) materials are widely studied as complements to Si complementary metal-oxide-semiconductor technology. Field-effect transistors (FETs) made with 2D materials often exhibit mobilities

Comparable Enhancement of TERS signals from WeSe2 on Chromium and Gold.

April 6, 2020
Albert Davydov, Sergiy Krylyuk, Angela R. Hight Walker, Bojan R. Ilic, Andrey Krayev, Ashish Bhattarai, Alan G. Joly, Matej Velicky, Patrick Z. El-Khoury
Plasmonic tip-sample junctions, at which the incident and scattered optical fields are localized and optimally enhanced, are often exploited to achieve ultrasensitive and highly spatially localized tip-enhanced Raman scattering (TERS). Recent work has

Doping of MoTe2 via surface charge-transfer in ambient air

March 19, 2020
Gheorghe Stan, Cristian Ciobanu, Sri Ranga Jai Likith, Asha Rani, Sergiy Krylyuk, Albert Davydov
Doping is a key process that facilitates the use of semiconductors for electronic and optoelectronic devices, by which the concentration and type of majority carriers (electrons or holes) can be modified controllably to achieve desired conduction

Valley Phenomena in the Candidate Phase Change Material WSe2(1-x)Te2x

January 15, 2020
Sean M. Oliver, Joshua Young, Sergiy Krylyuk, Thomas L. Reinecke, Albert Davydov, Patrick M. Vora
Alloyed transition metals dichalcogenides (TMDs) provide the unique opportunity for coupling band engineering and valleytronic phenomena in an atomically-thin platform. However, valley properties remain largely unexplored in TMD alloys. Here, we

Dielectric properties of Nb_x}W_1-x}Se_2} alloys

December 16, 2019
Albert Rigosi, Heather M. Hill, Sergiy Krylyuk, Nhan V. Nguyen, Angela Hight Walker, Albert Davydov, David Newell
The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work

Near-infrared photonic phase-change properties of transition metal ditellurides.

September 23, 2019
Albert Davydov, Sergiy Krylyuk, Yifei Li, Akshay Singh, Rafael Jaramillo
We use the (Mo,W)Te2 system to explore the potential of transition metal dichalcogenides (TMDs) as phasechange materials for integrated photonics. We measure the complex optical constant of MoTe2 in both the 2H and 1T’ phases by spectroscopic ellipsometry

Automated Mechanical Exfoliation of MoS2 and MoTe2 Layers for 2D Materials Applications

September 13, 2019
Albert Davydov, Sergiy Krylyuk, Kyle J. DiCamillo, Makarand Paranjape, Wendy Shi
An automated technique is presented for mechanically exfoliating single-layer and few-layer transition metal dichalcogenides using controlled shear and normal forces imposed by a parallel plate rheometer. A thin sample that is removed from bulk MoS2 or

MoS2 cleaning by acetone and UV-Ozone: Geological vs. synthetic material (Letter)

January 25, 2019
Keren M. Freedy, Sales G. Maria, Sergiy Krylyuk, Albert Davydov, Stephen J. McDonnell
The effects of poly(methyl methacrylate) PMMA removal procedures on the surface chemistry of both geological and chemical vapor deposited (CVD) MoS2 are investigated. X-ray photoelectron spectroscopy is employed following acetone dissolution, thermal

An Ultra-fast Multi-level MoTe2-based RRAM

January 17, 2019
Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to 2Hd phase transition. Different from conventional RRAM devices based on ionic migration, the

Electric field induced phase transition in vertical MoTe2 and Mo1-xWxTe2 based RRAM devices

December 10, 2018
Feng Zhang, Sergiy Krylyuk, Huairuo Zhang, Cory A. Milligan, Dmitry Y. Zemlyanov, Leonid A. Bendersky, Albert Davydov, Joerg Appenzeller, Benjamin P. Burton, Yugi Zhu
Transition metal dichalcogenides have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature and polymorphism. Here, we report an electric-field-induced structural transition from a 2H