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Displaying 51 - 53 of 53

A Combinatorial Study of Metal Gate/HfO2 MOSCAPS

September 1, 2006

Author(s)

Martin L. Green, K S. Chang, Ichiro Takeuchi, T Chikyow

The Nucleation of Atomic Layer Deposited HfO2 Films, and Evolution of Their Microstruture, Studied by Grazing Incidence Small Angle X-ray Scattering Using Synchrotron Radiation

January 16, 2006

Author(s)

Martin L. Green, Andrew J. Allen, Xiang Li, Junling Wang, J Ilavsky, A Delabie, R Puurunen, B Brijs

Strain Relaxation in Patterned Strained Silicon Directly on Insulator Structures

December 19, 2005

Author(s)

R Z. Lei, W Tsai, I Aberg, T B. O'Reilly, J L. Hoyt, D A. Antoniadis, H I. Smith, Albert J. Paul, Martin L. Green, J Li, R Hull

Strain relaxation is studied in Strained Silicon Directly on Insulator (SSDOI) substrates patterned with nano-scale features. Using interference lithography, biaxially-strained SSDOI substrates with 30 nm-thick strained Si on insulator films were patterned