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Search Publications by: Bruce D. Ravel (Fed)

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Displaying 51 - 57 of 57

Tomography of Integrated Circuit Interconnect With an Electromigration Void

May 1, 2000
Author(s)
Zachary H. Levine, A R. Kalukin, M Kuhn, S P. Frigo, I McNulty, C C. Retsch, Y Wang, Uwe Arp, Thomas B. Lucatorto, Bruce D. Ravel, Charles S. Tarrio
An integrated circuit interconnect was subject to accelerated-life conditions to induce an electromigration void. The silicon substrate was removed, leaving only the interconnect encased test structure encased in silica. We imaged the sample with 1750 eV

Combined EXAFS and First-Principles Theory Study of Pb 1-x Ge x Te

December 1, 1999
Author(s)
Bruce D. Ravel, Eric J. Cockayne, E Newville, K M. Rabe
The narrow band-gap semiconductor Pb 1-xGe xTe has a low-temperature ferroelectric rhombohedral phase whose average structure is a distorted rocksalt structure. We have measured the Extended X-Ray-Absorption Fine-Structure (EXAFS) spectra of Pb 1-xGe xTe

X-Ray-Absorption Edge Separation Using Diffraction Anomalous Fine-Structure

July 1, 1999
Author(s)
Bruce D. Ravel, Charles E. Bouldin, H Renevier, J -. Hodeau, J -. Berar
When two or more absorption edges in a material are sufficiently close in energy, Extended X-ray-Absorption Fine-Structure (EXAFS) spectroscopy may be of limited utility as the usable data range above the lower energy edge is truncated by the presence of

The Local Structure of Ferroelectric Pb 1-x Ge x Te

May 1, 1999
Author(s)
Bruce D. Ravel, Eric J. Cockayne, K M. Rabe
The narrow band-gap semiconductor Pb_{1-x}Ge_xTe has a low-temperature ferroelectric rhombohedral phase whose average structure is a distorted rock salt structure. We have measured the Extended X-ray-Absorption Fine-Structure spectra of Pb_{1-x}Ge_xTe with

Diffraction Anomalous Fine Structure Study of Strained GA 1-x In x As on GaAs(001)

August 20, 1998
Author(s)
Joseph C. Woicik, J O. Cross, Charles E. Bouldin, Bruce D. Ravel, J G. Pellegrino, B W. Steiner, S G. Bompadre, L B. Sorensen, K E. Miyano, J P. Kirkland
Diffraction anomalous fine-structure measurements performed at both the Ga and As K edges have determined the Ga-As bond length to be 2.442 ± 0.005 {Angstrom} in a buried, 213 {Angstrom} thick Ga^0.78^In 0.22As layer grown coherently on GaAs(001). This
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