Publications

Displaying 51 - 54 of 54

The Local Structure of Ferroelectric Pb 1-x Ge x Te

May 1, 1999

Author(s)

Bruce D. Ravel, Eric J. Cockayne, K M. Rabe

The narrow band-gap semiconductor Pb_{1-x}Ge_xTe has a low-temperature ferroelectric rhombohedral phase whose average structure is a distorted rock salt structure. We have measured the Extended X-ray-Absorption Fine-Structure spectra of Pb_{1-x}Ge_xTe with

Identification of Materials in Integrated Circuit Interconnects Using X-Ray Absorption Near Edge Spectroscopy

January 1, 1999

Author(s)

Zachary H. Levine, Bruce D. Ravel

Most integrated circuit interconnects are principally composed of a few metals, including aluminum alloyed with copper, tungsten, titanium, A1 3 Ti, and A1 2Cu, in a silica matrix. Integrated circuit interconnects have recently been proposed as a candidate

Diffraction Anomalous Fine Structure Study of Strained GA 1-x In x As on GaAs(001)

August 20, 1998

Author(s)

Joseph C. Woicik, J O. Cross, Charles E. Bouldin, Bruce D. Ravel, J G. Pellegrino, B W. Steiner, S G. Bompadre, L B. Sorensen, K E. Miyano, J P. Kirkland

Diffraction anomalous fine-structure measurements performed at both the Ga and As K edges have determined the Ga-As bond length to be 2.442 ± 0.005 {Angstrom} in a buried, 213 {Angstrom} thick Ga^0.78^In 0.22As layer grown coherently on GaAs(001). This

Real Space Multiple Scattering Calculation and Interpretation of X-Ray Absorption Near Edge Structure

January 23, 1998

Author(s)

A L. Ankudinov, Bruce Ravel, J J. Rehr, S D. Conradson

A self-consistent, real space multiple-scattering (RSMS) approach for calculations of x-ray absorption near edge structure (XANES) is presented and implemented in an ab initio code applicable to arbitrary aperiodic or periodic systems. This approach yields

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