Diffraction Anomalous Fine Structure Study of Strained GA1-xInxAs on GaAs(001)

Published

August 20, 1998

Author(s)

Joseph C. Woicik, J O. Cross, Charles E. Bouldin, Bruce D. Ravel, J G. Pellegrino, B W. Steiner, S G. Bompadre, L B. Sorensen, K E. Miyano, J P. Kirkland

Abstract

Diffraction anomalous fine-structure measurements performed at both the Ga and As K edges have determined the Ga-As bond length to be 2.442 ± 0.005 {Angstrom} in a buried, 213 {Angstrom} thick Ga^0.78^In_0.22As layer grown coherently on GaAs(001). This bond length corresponds to a strain induced contraction of 0.013 ± 0.005 {Angstrom} relative to the Ga-As bond length in bulk Ga_1-xIn_xAs of the same composition. Together with recent extended x-ray absorption fine-structure measurements performed at the In K edge [Woicik et al., Phys. Rev. Lett. 79, 5026 (1997)], these data establish the uniform bond-length distortion model for strained-layer semiconductors.

Citation

Physical Review B (Condensed Matter and Materials Physics)

Volume

58

Issue

8

Pub Type

Journals

Keywords

extended x-ray absorption, Ge-K edge, Ge^x^Si^1-x^ alloys, Vegard's law

Citation

Woicik, J. , Cross, J. , Bouldin, C. , Ravel, B. , Pellegrino, J. , Steiner, B. , Bompadre, S. , Sorensen, L. , Miyano, K. and Kirkland, J. (1998), Diffraction Anomalous Fine Structure Study of Strained GA_1-xIn_xAs on GaAs(001), Physical Review B (Condensed Matter and Materials Physics) (Accessed October 13, 2025)