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Diffraction Anomalous Fine Structure Study of Strained GA1-xInxAs on GaAs(001)



Joseph C. Woicik, J O. Cross, Charles E. Bouldin, Bruce D. Ravel, J G. Pellegrino, B W. Steiner, S G. Bompadre, L B. Sorensen, K E. Miyano, J P. Kirkland


Diffraction anomalous fine-structure measurements performed at both the Ga and As K edges have determined the Ga-As bond length to be 2.442 ± 0.005 {Angstrom} in a buried, 213 {Angstrom} thick Ga^0.78^In0.22As layer grown coherently on GaAs(001). This bond length corresponds to a strain induced contraction of 0.013 ± 0.005 {Angstrom} relative to the Ga-As bond length in bulk Ga1-xInxAs of the same composition. Together with recent extended x-ray absorption fine-structure measurements performed at the In K edge [Woicik et al., Phys. Rev. Lett. 79, 5026 (1997)], these data establish the uniform bond-length distortion model for strained-layer semiconductors.
Physical Review B (Condensed Matter and Materials Physics)


extended x-ray absorption, Ge-K edge, Ge^x^Si^1-x^ alloys, Vegard's law
Created August 20, 1998, Updated February 19, 2017