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Search Publications by: James E. Maslar (Fed)

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Displaying 1 - 25 of 70

Comparison of saturator designs for low volatility liquid precursor delivery

April 1, 2023
Author(s)
James E. Maslar, William A. Kimes, Vladimir B. Khromchenko, Brent Sperling, Ravindra Kanjolia
Low volatility precursors are widely utilized in chemical vapor deposition and atomic layer deposition processes. Such precursors are often delivered from one of two common saturator designs: a bubbler or a flow over vessel. Previous reports concerning

Characterization of bubbler performance for low-volatility liquid precursor delivery

June 27, 2019
Author(s)
James E. Maslar, William A. Kimes, Brent A. Sperling, Ravindra K. Kanjolia
The performance of a bubbler to deliver the low-volatility, liquid cobalt precursor μ2- η2-(tBu- acetylene) dicobalthexacarbonyl (CCTBA) for reduced-pressure chemical vapor deposition and atomic layer deposition processes was characterized. A relatively

In situ infrared spectroscopy during La2O3 ALD using La(iPrCp)3 and H2O

April 26, 2018
Author(s)
Brent A. Sperling, James E. Maslar, Sergei Ivanov
Infrared spectra have been obtained during atomic layer deposition using tris(isopropylcyclopentadienyl)lanthanum, La(iPrCp)3, and water as precursors at 160 °C and 350 °C. Gas-phase spectra of La(iPrCp)3 are additionally obtained for comparison. At low

Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition

July 12, 2017
Author(s)
Berc Kalanyan, William A. Kimes, Ryan Beams, Stephan J. Stranick, Elias J. Garratt, Irina Kalish, Albert Davydov, Ravindra Kanjolia, James E. Maslar
High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely

In-Situ Metrology to Characterize Water Vapor Delivery during Atomic Layer Deposition

May 2, 2016
Author(s)
Tariq Ahmido, William A. Kimes, Brent A. Sperling, Joseph T. Hodges, James E. Maslar
Water is often employed as the oxygen source in metal oxide atomic layer deposition (ALD) processes. It has been reported that variations in the amount of water delivered during metal oxide ALD can impact the oxide film properties. Hence, one contribution

Tearing and scrolling of transferred graphene

April 29, 2014
Author(s)
Guangjun Cheng, Brent A. Sperling, James E. Maslar, Curt A. Richter, Angela R. Hight Walker
We present an investigation on tearing and scrolling of the transferred graphene on a Si/SiO2 substrate. Graphene grown by chemical vapor deposition (CVD) is transferred onto a Si/SiO2 substrate using a wet polymer-mediated process. Upon the removal of

Time-resolved surface infrared spectroscopy during atomic layer deposition of TiO2 using tetrakis(dimethylamido)titanium and water

April 23, 2014
Author(s)
Brent A. Sperling, John Hoang, William A. Kimes, James E. Maslar, Kristen L. Steffens, Nhan V. Nguyen
Atomic layer deposition of titanium dioxide using tetrakis(dimethylamido)titanium (TDMAT) and water vapor is studied by reflection-absorption infrared spectroscopy (RAIRS) with a time resolution of 120 ms. Decomposition of the adsorbed TDMAT is observed

Time-resolved surface infrared spectroscopy during atomic layer deposition

September 10, 2013
Author(s)
Brent A. Sperling, John J. Hoang, William A. Kimes, James E. Maslar
This work presents a novel method for obtaining surface infrared spectra with sub-second time resolution during atomic layer deposition (ALD). Using a rapid-scan Fourier transform infrared (FT-IR) spectrometer, we obtain a series of interferograms (120 ms)

Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors

April 30, 2013
Author(s)
Hao Zhu, Curt A. Richter, Erhai Zhao, John E. Bonevich, William A. Kimes, Hyuk-Jae Jang, Hui Yuan, Abbas Arab, Oleg A. Kirillov, James E. Maslar, D. E. Ioannou, Qiliang Li
Topological insulators are unique electronic materials with insulating interiors but robust metallic surfaces. Device applications exploiting their remarkable properties, such as surface conduction of helical Dirac electrons, have so far been hampered by

Development of a combinatorial characterization scheme for high-throughput investigations of hydrogen storage materials.

December 16, 2011
Author(s)
Jason Hattrick-Simpers, Z. Tan, H. Oguchi, Chun Chiu, Edwin J. Heilweil, James E. Maslar, Leonid A. Bendersky
In order to reliably increase the throughput of materials measured for hydrogen storage properties, a complete high-throughput characterization scheme has been developed that accurately measures the hydrogen storage properties of materials in quantities

In Situ Gas Phase Diagnostics for Titanium Nitride Atomic Layer Deposition

October 14, 2011
Author(s)
James E. Maslar, William A. Kimes, Brent A. Sperling
This report describes the performance of a technique for the simultaneous, rapid measurement of major gas phase species present during titanium nitride thermal atomic layer deposition involving tetrakis(dimethylamido) titanium (TDMAT) and ammonia. In this

In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition

July 12, 2011
Author(s)
James E. Maslar, William A. Kimes, Brent A. Sperling
Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical vapor