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Search Publications by: Thomas A. Germer (Fed)

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Displaying 126 - 150 of 385

Modeling the Effect of Finite Size Gratings on Scatterometry Measurements

September 1, 2008
Author(s)
Elizabeth Kenyon, Michael W. Cresswell, Heather Patrick, Thomas Germer
The interpretation of scatterometry measurements generally assumes that the grating extends over an area large enough to intercept all the illumination provided by an incident beam. However, in practice, the gratings used in scatterometry are relatively

Extraction of trench geometry and linewidth of nanoscale grating targets in (110)-oriented silicon using angle-resolved scatterometry

June 9, 2008
Author(s)
Heather J. Patrick, Thomas A. Germer, Michael W. Cresswell, Bin Li, Huai Huang, Paul S. Ho
The extraction of nanoscale dimensions and feature geometry of grating targets using signature-based optical techniques is an area of continued interest in semiconductor manufacturing. In the current work, we have performed angle-resolved scatterometry

Modeling the Effect of Finite Size Gratings on Scatterometry Measurements

February 25, 2008
Author(s)
Elizabeth Kenyon, Michael W. Cresswell, Heather Patrick, Thomas Germer
The interpretation of scatterometry measurements generally assumes that the grating extends over an area large enough to intercept all the illumination provided by an incident beam. However, in practice, the grat-ings used in scatterometry are relatively

Optical Critical Dimension Measurement of Silicon Grating Targets Using Back Focal Plane Scatterfield Microscopy

January 2, 2008
Author(s)
Heather J. Patrick, Ravikiran Attota, Bryan M. Barnes, Thomas A. Germer, Michael T. Stocker, Richard M. Silver, Michael R. Bishop
We demonstrate optical critical dimension measurement of lines in silicon grating targets using back focal plane scatterfield microscopy. In this technique, angle-resolved diffraction signatures are obtained from grating targets by imaging the back focal

Improved Method for Calibrating a Stokes Polarimeter

December 10, 2007
Author(s)
Bruno Boulbry, J C. Ramella-Roman, Thomas A. Germer
We present a method for calibrating polarimeters that uses a set of well-characterized reference polarizations and makes no assumptions about the optics contained in the polarimeter other than their linearity. The method requires that a matrix be

Relaxation Behavior of Polymer Structures Fabricated by Nanoimprint Lithography

August 14, 2007
Author(s)
Yifu Ding, Hyun Wook Ro, Thomas A. Germer, Jack F. Douglas, Brian C. Okerberg, Alamgir Karim, Christopher L. Soles
We study the decay of the imprinted polystyrene (PS) patterns under thermal annealing using light diffraction. The first order diffraction intensity from the imprinted gratings was measured as a function of annealing time. Local intensity maximum is

Modeling and Analysis of Scatterometry Signatures for Optical Critical Dimension Reference Material Applications

May 7, 2007
Author(s)
Heather J. Patrick, Thomas A. Germer, Michael W. Cresswell, Richard A. Allen, Ronald G. Dixson, Michael R. Bishop
We use an optical critical dimension technique, matching modeled to measured scatterometry signatures, to obtain critical dimension linewidth on grating targets fabricated using the single-crystal critical dimension reference materials process. The targets

Study of Test Structures for Use as Reference Material in Optical Critical Dimension Applications

March 22, 2007
Author(s)
Richard A. Allen, Heather Patrick, Michael Bishop, Thomas Germer, Ronald G. Dixson, William Gutherie, Michael W. Cresswell
Optical critical dimension (OCD) metrology has rapidly become an important technology in supporting the worldwide semiconductor industry. OCD relies on a combination of measurement and modeling to extract the average dimensions of an array of identical