NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: J Greg Gillen (Assoc)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 101 - 111 of 111

Secondary Ion Yield Matrix Effects in SIMS Depth Profiles of Si/Ge Multilayers

April 1, 1989
Author(s)
John G. Gillen, J M. Phelps, Randall W. Nelson, Peter Williams, Steven M. Hues
Thin multilayer samples of Si/Ge, with individual layer thicknesses of 4-33 nm, have been analyzed by secondary ion mass spectrometry (SIMS) using Ar+, O2+ and Cs+ primary ion beams. Bombardment with both Ar+ and O2+ produced positive secondary ion depth
Was this page helpful?