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Displaying 926 - 950 of 1729

Composition and Carrier Concentration Dependence of the Electronic Structure of InyGa1-yAs1-xNx Films With Nitrogen Mole Fraction Less Than 0.012

November 1, 2005
Author(s)
Youn S. Kang, Lawrence H. Robins, Anthony Birdwell, Alexander J. Shapiro, W. R. Thurber, Mark D. Vaudin, M M. Fahmi, D Bryson, S N. Mohammad
The electronic structure of Si-doped InyGa1-yAs1-xNx films on GaAs substrates, grown bynitrogen-plasma-assisted molecular-beam epitaxy, was examined by photoreflectance PR spectroscopy at temperatures between 20 and 300 K. The films were approximately 0.5

Fracture Strength of Silicon Carbide Microspecimens

October 1, 2005
Author(s)
W N. Sharpe, O Jadaan, G M. Beheim, George D. Quinn, N N. Nemeth
Micro silicon carbide tension specimen were prepared with straight, curved, and notched gage lengths. These were tested to failure and the strengths analyzed by Weibull statistics. Fractographic analysis confirmed that strength limiting flaws were etch
Displaying 926 - 950 of 1729
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