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Displaying 801 - 825 of 2634

Correlation of Local Structure and Electrical Activation in Arsenic Ultra Shallow Junctions in Silicon

November 5, 2008
Author(s)
D. Giubertoni, Giancarlo Pepponi, Salvatore Gennaro, Massimo Bersani, M A. Sahiner, Stephen P. Kelty, Roisin Doherty, Majeed A. Foad, Max Kah, Karen J. Kirkby, Joseph Woicik
The understanding of the behavior of arsenic in highly doped near surface silicon layers is of crucial importance for the formation of N-type Ultra Shallow Junctions in current and future VLSI technology. This is of peculiar relevance when studying novel

Combinatorial Studies of Ba-Y-Cu-O Films for Coated-Conductor Applications

October 23, 2008
Author(s)
Winnie K. Wong-Ng, Makoto Otani, Igor Levin, Peter K. Schenck, Zhi Yang, Guangyao Liu, Lawrence P. Cook, Ron Feenstra, Wei Zheng, Marty Rupich
Phase relationships in bulk and thin film Ba-Y-Cu-O high-Tc superconductor system were determined at processing conditions relevant for industrial production of coated conductors. Our results demonstrated that the absence of BaY2CuO5 (which has a critical

Characterization of Monolayer Formation on Aluminum-Doped Zinc Oxide Thin Films

August 21, 2008
Author(s)
C Rhodes, S E. Lappi, Daniel A. Fischer, S Sambasivan, Jan Genzer, S Franzen
The optical and electronic properties of aluminum-doped zinc oxide (AZO) thin films on a glass substrate have been investigated experimentally and theoretically. Optical studies with coupling in the Kretschmann configuration reveal an angle-dependent

Growth, Crystal Structure, and Properties of Epitaxial BiScO3 Thin Films

August 15, 2008
Author(s)
Igor Levin, Susan Trolier-McKinstry, Michael D. Biegalski, Junling Wang, Alexei A. Belik, E. Takayama-Muromachi
Epitaxial thin films of BiScO3, a compound which is thermodynamically unstable under ambient conditions, were grown on BiFeO3-buffered SrTiO3 substrates despite the very large lattice mismatch between the film and the substrate. The epitaxial BiScO3 films

Nature of Transition Layers at the SiO 2 /SiC Interface

July 14, 2008
Author(s)
T Zheleva, Aivars Lelis, G Duscher, F Liu, Igor Levin, M Das
Electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and structural changes at the SiO2/SiC interfaces during processing. We analyzed the structure and chemistry

Roughness-Induced Superhydrophobicity: A Way to Design Non-Adhesive Surfaces

July 4, 2008
Author(s)
Michael Nosonovsky, Bharat Bhushan
Non-adhesive and water-repellent surfaces are required for many tribological applications. Roughness-induced superhydrophobicty has been suggested as a way to reduce adhesion and stiction. In this paper, the theory of roughness-induced superhydrophobicity
Displaying 801 - 825 of 2634
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