Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Growth, Crystal Structure, and Properties of Epitaxial BiScO3 Thin Films



Igor Levin, Susan Trolier-McKinstry, Michael D. Biegalski, Junling Wang, Alexei A. Belik, E. Takayama-Muromachi


Epitaxial thin films of BiScO3, a compound which is thermodynamically unstable under ambient conditions, were grown on BiFeO3-buffered SrTiO3 substrates despite the very large lattice mismatch between the film and the substrate. The epitaxial BiScO3 films retain all principal structural features of high-pressure bulk BiScO3 (i.e. octahedral tilting and the pattern of Bi displacements) that give rise to a pseudo-orthorhombic unit cell. Films grown on (100) substrates adopt the bulk monoclinic structure whereas films on the (110) substrates exhibit a somewhat different symmetry. The dielectric permittivities were modest (~30) with low loss tangents (<1% at low fields); no maxima were observed over the temperature range of -200 and +350°C. There is no evidence of significant hysteresis (either ferroelectric or antiferroelectric) at room temperature up to the breakdown strength of the films.
Journal of Applied Physics


bismuth scandate, distortions, electron microscopy, perovskite


Levin, I. , Trolier-McKinstry, S. , Biegalski, M. , Wang, J. , Belik, A. and Takayama-Muromachi, E. (2008), Growth, Crystal Structure, and Properties of Epitaxial BiScO3 Thin Films, Journal of Applied Physics, [online], (Accessed July 14, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created August 15, 2008, Updated February 19, 2017