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Nature of Transition Layers at the SiO2/SiC Interface
Published
Author(s)
T Zheleva, Aivars Lelis, G Duscher, F Liu, Igor Levin, M Das
Abstract
Electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and structural changes at the SiO2/SiC interfaces during processing. We analyzed the structure and chemistry of these interfaces in the thermally grown SiO2/4H-SiC heterostructures using high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, and spatially-resolved electron energy loss spectroscopy. The analyses revealed presence of distinct layers, several nanometers thick, on each side of the interface; additionally, partial amorphization of the top SiC surface was observed. These interfacial layers were attributed to a formation the ternary Si-C-O phase during thermal annealing.
Citation
Applied Physics Letters
Volume
93
Issue
2
Pub Type
Journals
Keywords
electron energy loss spectroscopy, interfaces, silicon carbide, silicon oxide, transmission electron microscopy
Zheleva, T.
, Lelis, A.
, Duscher, G.
, Liu, F.
, Levin, I.
and Das, M.
(2008),
Nature of Transition Layers at the SiO<sub>2</sub>/SiC Interface, Applied Physics Letters
(Accessed December 3, 2023)