Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Nature of Transition Layers at the SiO2/SiC Interface



T Zheleva, Aivars Lelis, G Duscher, F Liu, Igor Levin, M Das


Electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and structural changes at the SiO2/SiC interfaces during processing. We analyzed the structure and chemistry of these interfaces in the thermally grown SiO2/4H-SiC heterostructures using high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, and spatially-resolved electron energy loss spectroscopy. The analyses revealed presence of distinct layers, several nanometers thick, on each side of the interface; additionally, partial amorphization of the top SiC surface was observed. These interfacial layers were attributed to a formation the ternary Si-C-O phase during thermal annealing.
Applied Physics Letters


electron energy loss spectroscopy, interfaces, silicon carbide, silicon oxide, transmission electron microscopy


Zheleva, T. , Lelis, A. , Duscher, G. , Liu, F. , Levin, I. and Das, M. (2008), Nature of Transition Layers at the SiO<sub>2</sub>/SiC Interface, Applied Physics Letters (Accessed December 3, 2023)
Created July 13, 2008, Updated October 12, 2021