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Displaying 62701 - 62725 of 74384

Secondary Ion Yield Matrix Effects in SIMS Depth Profiles of Si/Ge Multilayers

April 1, 1989
Author(s)
John G. Gillen, J M. Phelps, Randall W. Nelson, Peter Williams, Steven M. Hues
Thin multilayer samples of Si/Ge, with individual layer thicknesses of 4-33 nm, have been analyzed by secondary ion mass spectrometry (SIMS) using Ar+, O2+ and Cs+ primary ion beams. Bombardment with both Ar+ and O2+ produced positive secondary ion depth

Use of Thorium as a Target in Electron Spin Analyzers

April 1, 1989
Author(s)
Jabez McClelland, M Scheinfein, Daniel T. Pierce
Measurements of the effective Sherman function have been carried out for 10-100-keV spin-polarized electrons scattering from a thick thorium target in a retarding Mott analyzer. At 20 and 100 keV the dependence on the maximum energy loss accepted by the

Microchemical and Molecular Dating

March 1, 1989
Author(s)
Lloyd A. Currie, T. W. Stafford, A. E. Sheffield, George A. Klouda, Stephen A. Wise, Robert A. Fletcher, D. J. Donahue, A.J.T. Jull, T. W. Linick
Displaying 62701 - 62725 of 74384
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