December 1, 1999
Author(s)
M V. Rao, A K. Berry, T Q. Do, M C. Ridgway, P Chi, J Waterman
Single and multiple energy S and Si ion-implantations were performed at room temperature (RT) and at 200 C into GaSb epitaxial layers grown on semi-insulating GaAs substrates. The implanted material was annealed with a Si 3N 4 cap at 400-600 C for 5 min