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Displaying 39551 - 39575 of 73461

Rotational Spectrum of Soman

January 1, 2004
Author(s)
R S. DaBell, R D. Suenram, Angela R. Hight Walker, R J. Lavrich, David F. Plusquellic, M W. Ellzy, J M. Lochner, L Cash, J O. Jensen, A C. Samuels

Salt solubility and deposition in high temperature and pressure aqueous solutions

January 1, 2004
Author(s)
M S. Hodes, K A. Smith, Wilbur S. Hurst, Walter J. Bowers Jr., P Griffith, K Sako
Solubility and deposition experiments were performed with aqueous sodium sulfate and potassium sulfate solutions at elevated temperatures and pressures typical of the Supercritical Water Oxidation (SCWO) process. For all experiments the test cell was the

Scattering by a Sphere with a Dielectric Half-Space or on Another Sphere

January 1, 2004
Author(s)
Egon Marx
Particle contamination of dielectric or conducting surfaces can be detected by shining light on the surface and looking for abnormal scattering distributions. This procedure can be simulated by computing the scattering distribution for a dielectric sphere

Scattering Measurements for High Throughput Materials Science Research

January 1, 2004
Author(s)
A I. Norman, J Cabral, Alamgir Karim, Eric J. Amis
High throughput scattering methods are employed to study phase behavior over a concentration gradient of either Polystyrene (PS) in a Polystyrene/Polybutadiene (PS/PB) blend, or of diblock copoly(ethyleneoxide-butyleneoxide) in water. The combinatorial

Shape-Sensitive Linewidth Measurements of Resist Structures

January 1, 2004
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
Widths of developed 193 nm resist lines were measured by two methods and compared. One method was a new model-based library method. In this method the scanning electron microscope (SEM) images corresponding to various edge shapes are simulated in advance

Single-Electron Transistor Spectroscopy of InGaAs Self-Assembled Quantum Dots

January 1, 2004
Author(s)
Kevin Osborn, Mark W. Keller, Richard Mirin
A single-electron transistor is used to detect tunneling of single electrons into self-assembled InGaAs quantum dots. Aluminum single-electron transistors (SETs) are fabricated over an MBE-grown structure containing quantum dots (QDs) and an underlying n
Displaying 39551 - 39575 of 73461
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