December 1, 2005
Author(s)
Sang-Mo Koo, Qiliang Li, Monica D. Edelstein, Curt A. Richter, Eric M. Vogel
We report an approach to engineer the local band structure of silicon nanowire (SiNW) field-effect transistors (FETs) by using a dual-gated structure. In this device structure, by changing the local bandgap profile of the channel, the top-gate can suppress