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NIST Authors in Bold

Displaying 351 - 375 of 1314

Photonic-assisted Endoscopic Analysis of Guided W-band Pulses

August 24, 2014
Author(s)
Jeffrey A. Jargon, DongJoon Lee, JaeYong Kwon
We present a photonic-assisted time-domain measurement technique for exploring millimeter-wave propagation through a W-band waveguide. The electric fields, guided inside a rectangular waveguide, are sampled using a sub-millimeter-scale electro-optic probe

Broadband Rydberg Atom Based Self-Calibrating RF E-field Probe

August 16, 2014
Author(s)
Christopher L. Holloway, Joshua A. Gordon, Steven R. Jefferts, Thomas P. Heavner
We present a significantly new approach for an electric (E) field probe. The probe is based on the interaction of RF-fields with Rydberg atoms, where alkali atoms are excited optically to Rydberg states and the applied RF-field alters the resonant state of

Characterizing a Device's susceptibility to broadband signals: A case study

August 4, 2014
Author(s)
Jason B. Coder, John M. Ladbury, David Hunter
It is common for electronic devices to be tested for their susceptibility to radiated signals they may be exposed to during their normal operation. A reverberation chamber is well suited to perform this type of testing because it can expose the device

Dielectric characterization by microwave cavity perturbation corrected for non-uniform fields

July 23, 2014
Author(s)
Nathan D. Orloff, Jan Obrzut, Christian J. Long, Thomas F. Lam, James C. Booth, David R. Novotny, James A. Liddle, Pavel Kabos
The non-uniform fields that occur due to the slot in the cavity through which the sample is inserted and those due to the sample geometry itself decrease the accuracy of dielectric characterization by cavity perturbation at microwave frequencies. To

A Prescription for THz Transistor Characterization

April 4, 2014
Author(s)
Dylan F. Williams
Advances in microwave wafer probes and vector network analyzers have opened up a whole new world of discovery in microwave metrology, making possible accurate on-wafer measurements in printed transmission lines at microwave, millimeter-wave, sub-millimeter

Calibrations for Millimeter-Wave Silicon Transistor Characterization

March 1, 2014
Author(s)
Dylan F. Williams, Phillip Corson, Sharma Jahnavi, Krishnaswamy Harish, Wei Tai, George Zacharias, Ricketts David, Watson Paul, Dacquay Eric, Voinigescu Sorin
This paper compares on-wafer thru-reflect-line (TRL) and off-wafer short-open-load-thru (SOLT) and line-reflect-reflect-match (LRRM) vector-network-analyzer probe-tip calibrations for amplifier characterization and parasitic-extraction calibrations for

Designing High-Performance PbS and PbSe Nanocrystal Electronic Devices through Stepwise, Post-Synthesis, Colloidal Atomic Layer Deposition

February 6, 2014
Author(s)
Soong Ju Oh, Nathaniel E. Berry, Hi-Hyuk Choi, E. A. Gaulding, Hangfei Lin, Taejong Paik, Benjamin T. Diroll, Shinichiro Muramoto, Murray B. Christopher, Cherie R. Kagan
We report a facile, solution based, post synthetic colloidal atomic layer deposition (PS-cALD) process to engineer the surface stoichiometry and therefore electronic properties of lead chalcogenide nanocrystal (NC) thin films. Using the stepwise and

A four-pixel single-photon pulse-position array fabricated from WSi superconducting nanowire single- photon detectors

February 3, 2014
Author(s)
Varun B. Verma, Robert D. Horansky, Francesco Marsili, Jeffrey Stern, Matthew Shaw, Adriana E. Lita, Richard P. Mirin, Sae Woo Nam
We demonstrate a scalable readout scheme for an infrared single-photon pulse-position camera consisting of WSi superconducting nanowire single-photon detectors. For an N × N array, only 2 × N wires are required to obtain the position of a detection event

Tunable electrical conductivity in metal-organic framework thin film devices

January 3, 2014
Author(s)
Albert A. Talin, Andrea Centrone, Alexandra C. Ford, Michael E. Foster, Vitalie Stavila, Paul M. Haney, Robert A. Kinney, Veronika Szalai, Farid El Gabaly, Heayoung Yoon, Francois Leonard, Mark Allendorf
We report a strategy for realizing tunable electrical conductivity in MOFs in which the nanopores are infiltrated with redox-active, conjugated guest molecules. This approach is demonstrated using thin-film devices of the MOF Cu3(BTC)2 (also known as HKUST

10 TOhm and 100 TOhm High Resistance Measurements at NIST

September 25, 2013
Author(s)
Dean G. Jarrett, Marlin E. Kraft
The measurement techniques, standards, and bridges used to calibrate standard resistors in the 10 TΩ to 100TΩ range at NIST are described. Standard resistors, guarded Hamon transfer standard, and 10:1 and 100:1 bridge ratios, were used to provide multiple
Displaying 351 - 375 of 1314
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