January 1, 1999
Author(s)
G. Ulu, M. Gvkkavas, M. S. {Umlat}nl{umlat}, N. Biyikli, E. {Omlat}zbay, Richard Mirin, David H. Christensen
We designed, fabricated and characterized Al xGa 1-xAs/GaAs p-i-n resonant cavity enhanced (RCE) photodetectors with near-unit quantum efficiency. The peak wavelength is in the 780-830 nm region and post-process adjustable by recessing the top surface