Scanning Capacitance Microscopy Measurements and Modeling: Progress Towards Dopant Profiling of Silicon

Joseph Kopanski; Jay F. Marchiando; J R. Lowney

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Scanning Capacitance Microscopy Measurements and Modeling: Progress Towards Dopant Profiling of Silicon

Published

February 1, 1996

Author(s)

Joseph Kopanski, Jay F. Marchiando, J R. Lowney

Citation

Journal of Vacuum Science and Technology

Volume

B 14

Issue

Pub Type

Journals

Citation

Kopanski, J. , Marchiando, J. and Lowney, J. (1996), Scanning Capacitance Microscopy Measurements and Modeling: Progress Towards Dopant Profiling of Silicon, Journal of Vacuum Science and Technology (Accessed April 23, 2026)

Additional citation formats

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created January 31, 1996, Updated October 12, 2021

Was this page helpful?