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Saturated Defect Densities of Hydrogenated Amorphous Silicon Grown by Hot-Wire Chemical Vapor Deposition at Rates up to 150 /S

Published

Author(s)

A. H. Mahan, Y Xu, B P. Nelson, R S. Crandall, J D. Cohen, K C. Palinginis, Alan Gallagher

Abstract

Hydrogenated amorphous-silicon (a-Si:H) is grown by hot-wire chemical vapor deposition (HWCVD) at deposition rates (Rd) exceeding 140 /s (~0.8 m/min). These high rates are achieved by using multiple filaments and deposition conditions different than those used to produce our standard 20 /s material. With proper deposition parameter optimization, an AM1.5 photo-to-dark-conductivity ratio of 105 is maintained at an Rd up to 130 /s, beyond which it decreases. In addition, the first saturated defect densities of high Rd a-Si:H films are presented. These saturated defected densities are similar to those of the best HWCVD films deposited at 5-8 /s, and are invariant with Rd up to 130 /s.
Citation
Applied Physics Letters
Volume
78
Issue
No. 24

Keywords

hot-wire chemical vapor deposition, hydrogenated amorphous silicon, saturated defect densities

Citation

Mahan, A. , Xu, Y. , Nelson, B. , Crandall, R. , Cohen, J. , Palinginis, K. and Gallagher, A. (2001), Saturated Defect Densities of Hydrogenated Amorphous Silicon Grown by Hot-Wire Chemical Vapor Deposition at Rates up to 150 /S, Applied Physics Letters (Accessed April 18, 2024)
Created June 1, 2001, Updated February 17, 2017