Saturated Defect Densities of Hydrogenated Amorphous Silicon Grown by Hot-Wire Chemical Vapor Deposition at Rates up to 150 /S

Published

June 1, 2001

Author(s)

A. H. Mahan, Y Xu, B P. Nelson, R S. Crandall, J D. Cohen, K C. Palinginis, Alan Gallagher

Abstract

Hydrogenated amorphous-silicon (a-Si:H) is grown by hot-wire chemical vapor deposition (HWCVD) at deposition rates (R_d) exceeding 140 /s (~0.8 m/min). These high rates are achieved by using multiple filaments and deposition conditions different than those used to produce our standard 20 /s material. With proper deposition parameter optimization, an AM1.5 photo-to-dark-conductivity ratio of 10⁵ is maintained at an R_d up to 130 /s, beyond which it decreases. In addition, the first saturated defect densities of high R_d a-Si:H films are presented. These saturated defected densities are similar to those of the best HWCVD films deposited at 5-8 /s, and are invariant with R_d up to 130 /s.

Citation

Applied Physics Letters

Volume

78

Issue

No. 24

Pub Type

Journals

Keywords

hot-wire chemical vapor deposition, hydrogenated amorphous silicon, saturated defect densities

Citation

Mahan, A. , Xu, Y. , Nelson, B. , Crandall, R. , Cohen, J. , Palinginis, K. and Gallagher, A. (2001), Saturated Defect Densities of Hydrogenated Amorphous Silicon Grown by Hot-Wire Chemical Vapor Deposition at Rates up to 150 /S, Applied Physics Letters (Accessed October 24, 2025)