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Reliability and Characterization Challenges for Nano-Scale Electronic Devices

Published

Author(s)

John S. Suehle, Hao Xiong, Moshe Gurfinkel

Abstract

Scaling electronic devices to nano-scale dimensions may introduce unforeseen physical mechanisms that may seriously compromise device reliability. It has been discussed that as individual atoms comprise a larger fraction of the actual device area, defects associated with atomic-level changes may dominate failure and drift mechanisms. Also, it is expected that failure distributions will become more dispersed as the activation energy for defect generation is not expressed as a single value but as a distribution of values.
Proceedings Title
Nano and Giga Challenges in Electronics and Photonics
Conference Dates
March 14-16, 2007
Conference Location
Phoenix, AZ, USA

Keywords

Failure Mechanisms, Nanoelectronics, Reliability

Citation

Suehle, J. , Xiong, H. and Gurfinkel, M. (2007), Reliability and Characterization Challenges for Nano-Scale Electronic Devices, Nano and Giga Challenges in Electronics and Photonics, Phoenix, AZ, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32607 (Accessed April 21, 2024)
Created March 13, 2007, Updated October 12, 2021