Patterning of Octadecylsiloxane Self-assembled Monolayers on Si(100) using Ar(3P0,2) Atoms

Published

May 1, 1999

Author(s)

Shannon B. Hill, C Haich, F Dunning, G Walters, Jabez J. McClelland, Robert Celotta, H Craighead, J Han, D Tannenbaum

Abstract

We report the use of metastable (Ar³P_0,2) atoms and a physical mask to pattern octadecylsiloxane self-assembled monolayers grown directly onsilicon surfaces. The damage to the monolayer is confirmed using lateral force microscopy, changes in hydrophilicity and XPS analysis. Metastable atom exposuressufficient to uniformily damage the monolayer should allow pattern transfer to the underlying Si (100) substrate following chemical and plasma etching. With opticalmanipulation of the incident metastable atoms, this technique could provide the basis for massively-parallel nanoscale fabrication on silicon.

Citation

Journal of Vacuum Science and Technology B

Volume

17

Issue

3

Pub Type

Journals

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Keywords

atom lithography, lithography, metastable atoms, octadecylsiloxane, self-assembled nanolayers

Citation

Hill, S. , Haich, C. , Dunning, F. , Walters, G. , McClelland, J. , Celotta, R. , Craighead, H. , Han, J. and Tannenbaum, D. (1999), Patterning of Octadecylsiloxane Self-assembled Monolayers on Si(100) using Ar(³P₀,2) Atoms, Journal of Vacuum Science and Technology B, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620509 (Accessed October 22, 2025)