Patterning of Hydrogen-Passivated Si(100) using Ar(3P0,2) Metastable Atoms
S Hill, C Haich, F Dunning, G Walters, Jabez J. McClelland, Robert Celotta, H Craighead
Patterning of silicon by exposing a hydrogen-passivated Si(100) surface to Ar(3P0,2) metastable atoms through a fine grid in the presence of a small backgroundpressure of oxygen is described. Metastable atom impact leads to the formation of a uniform oxide layer that is sufficiently resistant to chemical etching to allowfeature depths > 20 nm to be realized. With optical manipulation of the incident metastable atoms, the technique could provide the basis for massively-parallel nanoscale fabrication on silicon without the use of organic resists.
, Haich, C.
, Dunning, F.
, Walters, G.
, McClelland, J.
, Celotta, R.
and Craighead, H.
Patterning of Hydrogen-Passivated Si(100) using Ar(<sup>3</sup>P<sub>0,2</sub>) Metastable Atoms, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620510
(Accessed December 2, 2023)