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Patterning of Hydrogen-Passivated Si(100) using Ar(3P0,2) Metastable Atoms

Published

Author(s)

S Hill, C Haich, F Dunning, G Walters, Jabez J. McClelland, Robert Celotta, H Craighead

Abstract

Patterning of silicon by exposing a hydrogen-passivated Si(100) surface to Ar(3P0,2) metastable atoms through a fine grid in the presence of a small backgroundpressure of oxygen is described. Metastable atom impact leads to the formation of a uniform oxide layer that is sufficiently resistant to chemical etching to allowfeature depths > 20 nm to be realized. With optical manipulation of the incident metastable atoms, the technique could provide the basis for massively-parallel nanoscale fabrication on silicon without the use of organic resists.
Citation
Applied Physics Letters
Volume
74
Issue
15

Keywords

ATOM

Citation

Hill, S. , Haich, C. , Dunning, F. , Walters, G. , McClelland, J. , Celotta, R. and Craighead, H. (1999), Patterning of Hydrogen-Passivated Si(100) using Ar(<sup>3</sup>P<sub>0,2</sub>) Metastable Atoms, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620510 (Accessed June 13, 2024)

Issues

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Created April 11, 1999, Updated October 12, 2021