Hill, S.
, Haich, C.
, Dunning, F.
, Walters, G.
, McClelland, J.
, Celotta, R.
and Craighead, H.
(1999),
Patterning of Hydrogen-Passivated Si(100) using Ar(<sup>3</sup>P<sub>0,2</sub>) Metastable Atoms, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620510
(Accessed October 22, 2025)
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Patterning of Hydrogen-Passivated Si(100) using Ar(3P0,2) Metastable Atoms
Published
Author(s)
S Hill, C Haich, F Dunning, G Walters, , , H Craighead
Abstract
Patterning of silicon by exposing a hydrogen-passivated Si(100) surface to Ar(3P0,2) metastable atoms through a fine grid in the presence of a small backgroundpressure of oxygen is described. Metastable atom impact leads to the formation of a uniform oxide layer that is sufficiently resistant to chemical etching to allowfeature depths > 20 nm to be realized. With optical manipulation of the incident metastable atoms, the technique could provide the basis for massively-parallel nanoscale fabrication on silicon without the use of organic resists.Citation
Applied Physics Letters
Volume
74
Issue
15
Pub Type
Journals
Download Paper
Keywords
ATOM
Citation
Issues
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Created April 11, 1999, Updated October 12, 2021