Optical volumetric inspection of sub-20 nm patterned defects with wafer noise
Bryan M. Barnes, Francois R. Goasmat, Martin Y. Sohn, Hui Zhou, Richard M. Silver, Andras Vladar, Abraham Arceo
We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D collected images into 3-D volumes of intensity information and also permits the use of multi-dimensional processing and thresholding techniques to enhance defect detectability. In this paper, the effects of wafer noise upon detectability using volumetric processing are assessed with both simulations and experiments using the SEMATECH 9 nm node intentional defect array. The potential extensibility and industrial application of this technique are evaluated.
Proceedings of the SPIE
February 23-27, 2014
San Jose, CA
Metrology, Inspection, and Process Control for Microlithography
, Goasmat, F.
, Sohn, M.
, Zhou, H.
, Silver, R.
, Vladar, A.
and Arceo, A.
Optical volumetric inspection of sub-20 nm patterned defects with wafer noise, Proceedings of the SPIE, San Jose, CA, [online], https://doi.org/10.1117/12.2048231
(Accessed December 7, 2023)