Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Observation of Landau Quantization and Berry Phase in Hydrogen-Intercalated Epitaxial Graphene on SiC

Published

Author(s)

Randolph E. Elmquist, Cheng-Jung Shih, Shun-Tsung Lo, Hsin-Yen Lee, Chi-Te Liang

Abstract

We here report the observed magneto-transport behavior in a hydrogen-intercalated epitaxial graphene device grown on an SiC substrate. We analyze both the longitudinal and Hall resistances in order to determine the classical carrier concentration and mobility in the low field regime, as well as the effective mass and the quantum mobility from the Shubnikov-de Haas (SdH) oscillations in the high field regime. The intrinsic Berry phase within our device is found to be 1.3π, indicating that our device consists mostly of a single layer graphene, and the expected four-fold Landau-level degeneracy is confirmed in our data, with the experimental result g_LL = 4.1.
Citation
Science Advances
Volume
2

Keywords

Berry phase, Graphene, Landau quantization

Citation

Elmquist, R. , Shih, C. , Lo, S. , Lee, H. and Liang, C. (2016), Observation of Landau Quantization and Berry Phase in Hydrogen-Intercalated Epitaxial Graphene on SiC, Science Advances (Accessed June 18, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created August 29, 2016, Updated May 4, 2017