Dwight, D.
, Rao, M.
, Holland, O.
, Kelner, G.
, Chi, P.
, Kretchmer, J.
and Ghezzo, M.
(1997),
Nitrogen and Aluminum Implantation in High Resistivity Silicon Carbide, Journal of Applied Physics
(Accessed December 12, 2024)
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Nitrogen and Aluminum Implantation in High Resistivity Silicon Carbide
Published
Author(s)
D Dwight, , O W. Holland, G Kelner, , J K. Kretchmer, M Ghezzo
Citation
Journal of Applied Physics
Volume
82
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created February 11, 1997, Updated October 12, 2021