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Nitrogen and Aluminum Implantation in High Resistivity Silicon Carbide

Published

Author(s)

D Dwight, M Rao, O W. Holland, G Kelner, P Chi, J K. Kretchmer, M Ghezzo
Citation
Journal of Applied Physics
Volume
82

Citation

Dwight, D. , Rao, M. , Holland, O. , Kelner, G. , Chi, P. , Kretchmer, J. and Ghezzo, M. (1997), Nitrogen and Aluminum Implantation in High Resistivity Silicon Carbide, Journal of Applied Physics (Accessed April 23, 2024)
Created February 11, 1997, Updated October 12, 2021