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NIST study accelerates understanding of oxidation mechanisms important to laser manufacturers

Published

Author(s)

Alexana Roshko, Y Chen, Robert K. Hickernell

Abstract

Researchers at NIST have shown that the oxidation kinetics of AlgaAs are independent of semiconductor growth method and edge preparation conditions. They found that the oxidation rate did not depend on whether the initial layers were grown by molecular beam epitaxy or metalorganic chemical vapor deposition.
Citation
Journal of Research (NIST JRES) -
Volume
107
Issue
3

Keywords

AlgaAs-oxidation, MBE, MOCVD, native oxide, AlgaAs-oxide
Created May 1, 2002, Updated January 27, 2020