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NIST Simulation of E-beam Inspection and CD-SEM in-line metrology: Final Report

Published

Author(s)

John S. Villarrubia

Abstract

This report summarizes results from a two-year project to develop a simulator for electron beam inspection and critical dimension scanning electron microscope (SEM) inline metrology tools. The development attempts to improve on prior simulators and develop a tool that can be used to explore the fundamental limits of e-beam instruments for imaging and measuring small features. The work covered by this report includes improvements to the secondary electron generation model, assembly of a database of the material properties and computation of scattering tables required for use of the improved model, improvements to simulation algorithms for non-conducting materials, and the addition of a capability to model the effects of charging in insulating samples. (61 references)
Citation
ISMI

Keywords

e-beam, charging, critical dimension, modeling, simulation

Citation

Villarrubia, J. (2011), NIST Simulation of E-beam Inspection and CD-SEM in-line metrology: Final Report, ISMI, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=907582, http://ismi.sematech.org (Accessed April 17, 2024)
Created January 1, 2011, Updated February 19, 2017