Fast-IDVG measurements have become an increasingly important tool to examine MOSFET transient degradation. The threshold voltage (VTH) extracted from fast-IDVG measurements is often used to infer the transient behavior of trapped charged in the gate dielectric and at the interface. In this study, we show that the peak transconductance (GM) can also be extracted reliably in the microsecond time scale. The transient GM behavior provides additional insights not easily observed from an examination of VTH alone. Specifically, transient GM results illustrate that an electron trapping/de-trapping transient component contributes to the transient behavior observed in the negative bias temperature instability (NBTI). This electron trapping component, has never been reported.
Citation: Electron Device Letters
Pub Type: Journals
NBTI, fast-IDVG, fast-GM, electron trapping