A Microcontamination Model for Rotating Disk Chemical Vapor Deposition Reactors

Published

February 11, 1998

Author(s)

R W. Davis, Elizabeth F. Moore, Donald R. Burgess Jr., Michael R. Zachariah

Abstract

This paper presents preliminary results from a model currently under development for gas-phase generated submicro-size contaminant particles (i.e., microcontaminants) in rotating disk chemical vapor deposition reactors. These particles present a problem during semiconductor processing, and this model is intended as a useful tool for gaining a better understanding of this problem. A one-dimensional formulation is employed to model the central section of the reactor, a technique which allows the use of detailed chemical reaction sets. The existing Sandia SPIN code, which contains a solver for the reacting flow, is modified by the addition of an aerosol model for the particles. This model utilizes a moment transport formulation which accounts for convection, diffusion, gravity, thermophoresis, chemical production, coagulation, and condensation. Results are presented primarily in terms of reactor performance maps which indicate film growth and contamination rates as functions of substrate temperature. The effects of variations in reactor operating parameters on these maps are discussed.

Conference Dates

March 23-27, 1998

Conference Title

International Conference on Characterization and Metrology for ULSI Technology

Pub Type

Conferences

Keywords

aerosol dynamics, chemical kinetics, chemical vapor deposition, fluid dynamics, numerical modeling, reacting flows

Citation

Davis, R. , Moore, E. , Burgess, D. and Zachariah, M. (1998), A Microcontamination Model for Rotating Disk Chemical Vapor Deposition Reactors, International Conference on Characterization and Metrology for ULSI Technology (Accessed May 6, 2024)