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Metrology for High-Frequency Nanoelectronics

Published

Author(s)

Thomas Mitchell (Mitch) Wallis, Atif A. Imtiaz, Hans Nembach, Paul Rice, Pavel Kabos

Abstract

Two metrological tools for high frequency measurements of nanoscale systems are described: (i) tow/N-port analysis of nanoscale devices as well as (ii) near-field scanning microwave microscopy (NSMM) for materials characterization. Calibrated two/N-port measurements were made on multiwalled carbon nanotubes (NWNT) welded to a coplanar waveguide. Significant changes inthe extracted high-frequency electrical response of the welded NWNT were measured when the contacts to the MWNT were modified. dditionally, NSMM was used to characterize films of nanotube soot deposited on copper and sapphire substrates. The material properties of the films showed a strong dependence on the substrate material.
Conference Dates
March 27-29, 2007
Conference Location
Gaithersburg, MD, USA
Conference Title
2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (formerly titled Characterization and Metrology for ULSI Technology)

Keywords

Radio frequency nanoelectronics, near-field electromagnetics, carbon nanotubes, scanning probe microscopy, microwaves, calibration

Citation

Wallis, T. , Imtiaz, A. , Nembach, H. , Rice, P. and Kabos, P. (2007), Metrology for High-Frequency Nanoelectronics, 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (formerly titled Characterization and Metrology for ULSI Technology), Gaithersburg, MD, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32626 (Accessed June 19, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created March 26, 2007, Updated October 12, 2021