Wallis, T.
, Imtiaz, A.
, Nembach, H.
, Rice, P.
and Kabos, P.
(2007),
Metrology for High-Frequency Nanoelectronics, 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (formerly titled Characterization and Metrology for ULSI Technology), Gaithersburg, MD, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32626
(Accessed April 25, 2024)
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Metrology for High-Frequency Nanoelectronics
Published
Author(s)
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Abstract
Two metrological tools for high frequency measurements of nanoscale systems are described: (i) tow/N-port analysis of nanoscale devices as well as (ii) near-field scanning microwave microscopy (NSMM) for materials characterization. Calibrated two/N-port measurements were made on multiwalled carbon nanotubes (NWNT) welded to a coplanar waveguide. Significant changes inthe extracted high-frequency electrical response of the welded NWNT were measured when the contacts to the MWNT were modified. dditionally, NSMM was used to characterize films of nanotube soot deposited on copper and sapphire substrates. The material properties of the films showed a strong dependence on the substrate material.Conference Dates
March 27-29, 2007
Conference Location
Gaithersburg, MD, USA
Conference Title
2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (formerly titled Characterization and Metrology for ULSI Technology)
Pub Type
Conferences
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Keywords
Radio frequency nanoelectronics, near-field electromagnetics, carbon nanotubes, scanning probe microscopy, microwaves, calibration
Citation
Created March 26, 2007, Updated October 12, 2021