Allen, R.
, Vartanian, V.
, Read, D.
and Baylies, W.
(2014),
Metrology for 3D Integration, ECS Trasnsaction: Moore-Than-More 2014, Orlando, FL, US, [online], https://doi.org/10.1149/06106.0105ecst (Accessed May 16, 2026)
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Metrology for 3D Integration
Published
Author(s)
, Victor H. Vartanian, , Winthrop A. Baylies
Abstract
Three-dimensional stacked integrated circuit (3DS-IC) fabrication requires complex technologies such as high-aspect ratio through- silicon vias (TSVs), wafer thinning, thin wafer handling and processing, and bonding of thin wafers with complex patterned surfaces. Each of these new fabrication steps is associated with metrology challenges. The SEMI 3DS-IC Committee is developing a set of guides to assist the 3DS-IC community in addressing these challenges by identifying metrology solutions. In this paper we provide an overview of the metrology needs for 3DS-IC, identify metrology solutions, and provide examples from SEMI standards describing methods for characterizing the quality and strength of bonds between wafers.Proceedings Title
ECS Trasnsaction: Moore-Than-More 2014
Volume
61
Issue
6
Conference Dates
May 12-16, 2014
Conference Location
Orlando, FL, US
Pub Type
Conferences
Download Paper
Keywords
three-dimensional stacked integrated circuits (3DS-IC), wafer bond, through-silicon via (TSV)
Citation
Issues
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Created May 13, 2014, Updated May 7, 2026