Bagchi, S.
, Lee, J.
, Krause, S.
and Roitman, P.
(1996),
Mechanism of Defect Formation in Low-Dose Oxygen Implanted Silicon-On-Insulator, Journal of Electronic Materials
(Accessed June 23, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Mechanism of Defect Formation in Low-Dose Oxygen Implanted Silicon-On-Insulator
Published
Author(s)
S. Bagchi, J. H. Lee, S. J. Krause,
Citation
Journal of Electronic Materials
Volume
25
Issue
1
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created December 31, 1995, Updated October 12, 2021