TY  - JOUR
AU  - S. Bagchi
AU  - J. Lee
AU  - S. Krause
AU  - Peter Roitman
C2  - Journal of Electronic Materials
DA  - 1996-01-01 00:01:00
LA  - en
M1  - 25
PB  - Journal of Electronic Materials
PY  - 1996
TI  - Mechanism of Defect Formation in Low-Dose Oxygen Implanted Silicon-On-Insulator
ER  -