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Measurement of Vanadium Impurity in Oxygen-Implanted Silicon by Isotope Dilution and Resonance Ionization Mass Spectrometry

Published

Author(s)

Santos D. Mayo, John D. Fassett, H. M. Kingston, R. J. Walker
Citation
Analytical Chemistry
Volume
62
Issue
3

Citation

Mayo, S. , Fassett, J. , Kingston, H. and Walker, R. (1990), Measurement of Vanadium Impurity in Oxygen-Implanted Silicon by Isotope Dilution and Resonance Ionization Mass Spectrometry, Analytical Chemistry (Accessed April 19, 2024)
Created January 31, 1990, Updated October 12, 2021