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Measurement of Roughness of Two Interfaces of a Dielectric Film by Scattering Ellipsometry

Published

Author(s)

Thomas A. Germer

Abstract

The polarization of light scattered by oxide films thermally grown on photolithographically-generated microrough silicon surfaces was measured as functions of scattering angle. Using the predictions of first-order vector perturbation theory for scattering from interfacial roughness to interpret the results, the roughness of each interface and the correlation function between the two interfaces can be determined. The results show the spatial frequency dependence of the SiO2/Si interface smoothening.
Citation
Physical Review Letters
Volume
85
Issue
No. 2

Keywords

ellipsometry, film correlation, roughness, scatter, silicon dioxide, thin films

Citation

Germer, T. (2000), Measurement of Roughness of Two Interfaces of a Dielectric Film by Scattering Ellipsometry, Physical Review Letters (Accessed July 21, 2024)

Issues

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Created July 1, 2000, Updated February 17, 2017