Germer, T.
(2000),
Measurement of Roughness of Two Interfaces of a Dielectric Film by Scattering Ellipsometry, Physical Review Letters
(Accessed January 2, 2026)
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Measurement of Roughness of Two Interfaces of a Dielectric Film by Scattering Ellipsometry
Published
Author(s)
Abstract
The polarization of light scattered by oxide films thermally grown on photolithographically-generated microrough silicon surfaces was measured as functions of scattering angle. Using the predictions of first-order vector perturbation theory for scattering from interfacial roughness to interpret the results, the roughness of each interface and the correlation function between the two interfaces can be determined. The results show the spatial frequency dependence of the SiO2/Si interface smoothening.Citation
Physical Review Letters
Volume
85
Issue
No. 2
Pub Type
Journals
Keywords
ellipsometry, film correlation, roughness, scatter, silicon dioxide, thin films
Citation
Issues
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Created July 1, 2000, Updated February 17, 2017