Monchesky, T.
and Unguris, J.
(2006),
Magnetic Properties of Co/GaAs(110), Physical Review B (Condensed Matter and Materials Physics), [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620592 (Accessed April 30, 2026)
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Magnetic Properties of Co/GaAs(110)
Published
Author(s)
T Monchesky, john unguris
Abstract
We observed three magnetic states of an ultrathin, atomically well-ordered Co film grown on a cleaved GaAs(110) substrate. For a Co thickness less than 3.4 monolayers (ML), we find a ferromagnetically dead layer associated with the formation of interfacial Co2GaAs. For thicknesses greater than 4.1 ML, the Co film grows with a bcc structure that contains 6 at. % Ga. The films are ferromagnetic with an easy axis along the [110] direction. This magnetic state persists up to a thickness of 7 ML, at which point an abrupt in-plane spin-reorientation transition reorients the magnetization along the [001] direction.Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
74
Issue
24
Pub Type
Journals
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Created December 4, 2006, Updated April 25, 2026