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Latent Reliability Degradation of Ultra-Thin Oxides after Heavy Ion and Gamma Ray Irradiation

Published

Author(s)

Bin Wang, John S. Suehle, Eric M. Vogel, J. R. Conley, C E. Weintraub, A. H. Johnston, J B. Bernstein

Abstract

We studied the effects of heavy ion and gamma ray irradiation on radiation-induced leakage current (RILC) and time-dependent dielectric breakdown (TDDB) life distributions of ultra-thin oxides (<3.5 nm). Thermal annealing experiments were carried out on irradiated devices to study the nature of RILC. TDDB experiments were also performed on irradiated devices with thermal annealing. Our results show that gamma irradiation had a minimal effect on intrinsic TDDB lifetime of ultra-thin oxides. However, heavy ion irradiation induced RILC and substantially reduced the lifetime of ultra-thin oxide films. Thermal annealing experiments suggests that RILC is due to trapped holes. Removal of RILC (and holes) do not improve TDDB lifetime.
Proceedings Title
IEEE International Integrated Reliability Workshop Final Report
Conference Dates
October 15-18, 2001
Conference Location
Lake Tahoe, CA, USA
Conference Title
Integrated Reliability Workshop

Keywords

reliability, Time-Dependent Dielectric Breakdown, heavy ion, radiation effects

Citation

Wang, B. , Suehle, J. , Vogel, E. , Conley, J. , Weintraub, C. , Johnston, A. and Bernstein, J. (2001), Latent Reliability Degradation of Ultra-Thin Oxides after Heavy Ion and Gamma Ray Irradiation, IEEE International Integrated Reliability Workshop Final Report, Lake Tahoe, CA, USA (Accessed March 1, 2024)
Created October 17, 2001, Updated October 12, 2021