Vogel, E.
(2002),
Issues with Electrical Characterization of Advanced Gate Dielectrics in Metal-oxide-semiconductor devices, Proc., Workshop on Dielectrics in Microelectronics, Grenoble, FR
(Accessed December 13, 2024)
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Issues with Electrical Characterization of Advanced Gate Dielectrics in Metal-oxide-semiconductor devices
Published
Author(s)
Abstract
Experimental measurements and simulations are used to provide an overview of key issues with the electrical characterization of metal-oxide-semiconductor (MOS) devices with ultra-thin oxide and alternate gate dielectrics. Experimental issues associated with the most common electrical characterization method, capacitance-voltage (C-V) are first described. Issues associated with equivalent oxide thickness extraction and comparison, interface state measurement, and defect generation are then overviewed.Proceedings Title
Proc., Workshop on Dielectrics in Microelectronics
Conference Dates
November 18-20, 2002
Conference Location
Grenoble, FR
Conference Title
2002 Workshop on Dielectrics in Microelectronics
Pub Type
Conferences
Keywords
capacitance-voltage, gate dielectric, metal-oxide-semiconductor (MOS), reliability, electrical characterization
Citation
Issues
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Created November 30, 2002, Updated February 17, 2017