Martin, A.
, O'Sullivan, P.
, Mathewson, A.
, Suehle, J.
and Chaparala, P.
(1997),
Investigation of the Influence of Ramped Voltage Stress on Intrinsic tbd of MOS Gate Oxides, Solid-State Electronics
(Accessed December 3, 2024)
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Investigation of the Influence of Ramped Voltage Stress on Intrinsic tbd of MOS Gate Oxides
Published
Author(s)
A. Martin, P. O'Sullivan, A. Mathewson, , P Chaparala
Citation
Solid-State Electronics
Volume
41
Issue
7
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 30, 1997, Updated October 12, 2021