Interface Characterization of Molecular-Monolayer/SiO2 Based Molecular Junctions
Curt A. Richter, Christina A. Hacker, Lee J. Richter, Oleg A. Kirillov, Eric M. Vogel
The properties of monolayers of molecules on thin SiO2 are of great interest for future hybrid Si-molecular device technologies. We present here a correlation of the results of dc-current-voltage (IV) and capacitance-voltage (CV) measurements with vibrational spectroscopy of metal/monolayer/SiO2/Si structures to establish an improved under-standing of the interactions at the buried metal/ monolayer and dielectric/silicon interfaces.
Proceedings of the International Semiconductor Device Research Symposium
December 7-9, 2005
International Semiconductor Device Research Symposium