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Interface Characterization of Molecular-Monolayer/SiO2 Based Molecular Junctions

Published

Author(s)

Curt A. Richter, Christina Hacker, Lee J. Richter, Oleg A. Kirillov, Eric M. Vogel

Abstract

The properties of monolayers of molecules on thin SiO2 are of great interest for future hybrid Si-molecular device technologies. We present here a correlation of the results of dc-current-voltage (IV) and capacitance-voltage (CV) measurements with vibrational spectroscopy of metal/monolayer/SiO2/Si structures to establish an improved under-standing of the interactions at the buried metal/ monolayer and dielectric/silicon interfaces.
Proceedings Title
Proceedings of the International Semiconductor Device Research Symposium
Conference Dates
December 7-9, 2005
Conference Location
Bethesda, MD, USA
Conference Title
International Semiconductor Device Research Symposium

Keywords

capacitance-voltage, current-voltage, FTIR, metal-oxide-semiconductor, molecular electronics, nanoelectronics, negative differential resistance.

Citation

Richter, C. , Hacker, C. , Richter, L. , Kirillov, O. and Vogel, E. (2006), Interface Characterization of Molecular-Monolayer/SiO2 Based Molecular Junctions, Proceedings of the International Semiconductor Device Research Symposium, Bethesda, MD, USA (Accessed April 15, 2024)
Created July 31, 2006, Updated October 12, 2021