High-accuracy determination of epitaxial AlGaAs composition with inductively coupled plasma optical emission spectroscopy

Published

March 1, 2006

Author(s)

Kristine A. Bertness, C. M. Wang, Marc L. Salit, Gregory C. Turk, Therese A. Butler, Albert J. Paul, Larry Robins

Abstract

Inductively coupled plasma optical emission spectroscopy is shown to confirm a recent correlation between photoluminescence (PL) peak energy for AlGaAs epitaxial films and the Al mole fraction x of those films. These two methods also agree within their expanded uncertainties with the Al composition as determined by growth rate measurements using reflection high energy electron diffraction intensity at the time of specimen growth. No systematic variations between the three methods as a function of Al mole fraction were observed. The lowest uncertainty was found in the PL measurements, allowing certification of Al mole fraction x in standard reference materials to an expanded uncertainty 0.003 for x< 0.35. Details of the uncertainty analysis, as well as possible improvements in those uncertainties, are discussed.

Citation

Journal of Vacuum Science and Technology B

Volume

24

Issue

2

Pub Type

Journals

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Keywords

AlGaAs, alloy composition, epitaxial layers, Inductively coupled plasma optical emission spectroscopy (ICP-OES), standard reference materials

Citation

Bertness, K. , Wang, C. , Salit, M. , Turk, G. , Butler, T. , Paul, A. and Robins, L. (2006), High-accuracy determination of epitaxial AlGaAs composition with inductively coupled plasma optical emission spectroscopy, Journal of Vacuum Science and Technology B, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32020 (Accessed April 19, 2024)