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GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope

Published

Author(s)

Kristine A. Bertness, Wenjun Li, Matthew D. Brubaker, Bryan T. Spann, Patrick Fay

Abstract

Top-gated GaN nanowire MOSFETs using Al2O3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of 98 A/m (normalized by wire diameter), off-current below 10-6 A/m, on/off ratio over 108, and an intrinsic transconductance of 155 S/m. The field-effect channel electron mobility is extracted to be 37 cm2/V-s at 300 K, which is primarily limited by acoustic phonon and impurity scattering. These performance metrics make GaN nanowire MOSFETs a promising candidate for emerging low-power applications such as sensors and RF for the internet of things.
Citation
IEEE Electron Device Letters
Volume
49
Issue
2

Keywords

Gallium nitride, field-effect mobility, MOSFET, nanowire

Citation

Bertness, K. , Li, W. , Brubaker, M. , Spann, B. and Fay, P. (2017), GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope, IEEE Electron Device Letters, [online], https://doi.org/10.1109/LED.2017.2785785 (Accessed December 9, 2022)
Created December 21, 2017, Updated December 19, 2019