TY - JOUR AU - Kristine Bertness AU - Wenjun Li AU - Matthew Brubaker AU - Bryan Spann AU - Patrick Fay C2 - IEEE Electron Device Letters DA - 2017-12-21 DO - https://doi.org/10.1109/LED.2017.2785785 LA - en M1 - 49 PB - IEEE Electron Device Letters PY - 2017 TI - GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope ER -