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Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials

Published

Author(s)

Luis Miaja Avila, Benjamin Caplins, Ann Debay, Paul T. Blanchard, Matthew D. Brubaker, Albert Davydov, David R. Diercks, Brian Gorman, Ashwin Rishinaramangalam, Daniel Feezell, Kristine A. Bertness, Norman Sanford
Citation
The Journal of Physical Chemistry C
Volume
125

Citation

Miaja, L. , Caplins, B. , Debay, A. , Blanchard, P. , Brubaker, M. , Davydov, A. , Diercks, D. , Gorman, B. , Rishinaramangalam, A. , Feezell, D. , Bertness, K. and Sanford, N. (2021), Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials, The Journal of Physical Chemistry C, [online], https://dx.doi.org/10.1021/acs.jpcc.0c08753?ref=pdf (Accessed April 19, 2021)
Created February 17, 2021, Updated March 1, 2021