NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials

Published

Author(s)

Luis Miaja Avila, Benjamin Caplins, Ann Debay, Paul T. Blanchard, Matthew D. Brubaker, Albert Davydov, David R. Diercks, Brian Gorman, Ashwin Rishinaramangalam, Daniel Feezell, Kristine A. Bertness, Norman Sanford
Citation
The Journal of Physical Chemistry C
Volume
125
Pub Type
Journals

Download Paper

https://dx.doi.org/10.1021/acs.jpcc.0c08753?ref=pdf
Local Download
Spectroscopy and Materials characterization

Citation

Miaja, L. , Caplins, B. , Debay, A. , Blanchard, P. , Brubaker, M. , Davydov, A. , Diercks, D. , Gorman, B. , Rishinaramangalam, A. , Feezell, D. , Bertness, K. and Sanford, N. (2021), Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials, The Journal of Physical Chemistry C, [online], https://dx.doi.org/10.1021/acs.jpcc.0c08753?ref=pdf (Accessed October 27, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created February 17, 2021, Updated March 1, 2021
Was this page helpful?