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PUBLICATIONS

Emittance Standards for Improved Radiation Thermometry During Thermal Processing of Silicon Materials

Published

Author(s)

Benjamin K. Tsai, D P. DeWitt, E A. Early, Leonard M. Hanssen, Sergey Mekhontsev, Matthias Rink, Kenneth G. Kreider, B J. Lee, Zhuomin Zhang
Proceedings Title
Proceedings 9th International Symposium on Temperature and Thermal Measurements in Industry and Science
Conference Dates
June 22-25, 2004
Conference Location
Dubrovnik, CR
Conference Title
International Symposium on Temperature and Thermal Measurements in Industry and Science
Pub Type
Conferences

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Keywords

emittance standards, models, optical properties, radiation thermometry, semiconductor thermal processing, uncertainty

Citation

Tsai, B. , DeWitt, D. , Early, E. , Hanssen, L. , Mekhontsev, S. , Rink, M. , Kreider, K. , Lee, B. and Zhang, Z. (2004), Emittance Standards for Improved Radiation Thermometry During Thermal Processing of Silicon Materials, Proceedings 9th International Symposium on Temperature and Thermal Measurements in Industry and Science, Dubrovnik, CR, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=841831 (Accessed October 9, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created June 22, 2004, Updated February 17, 2017