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Effects of Wafer Emissivity on Light-Pipe Rediometry in RTP Tools

Published

Author(s)

Kenneth G. Kreider, David W. Allen, D H. Chen, D P. DeWitt, Christopher W. Meyer, Benjamin K. Tsai

Abstract

We investigated the effect of different wafer emissivities and the effect of low emissivity films on rapid thermal processing (RTP) wafer temperature measurements using lightpipe radiation thermometers (LPRTs). These tests were performed in the NIST RTP test bed. We used a NIST thin-film thermocouple (TFTC) calibration wafer to calibrate the LPRTs in situ. The measurements of LPRTs viewing Au and Pt thin film spots in the center of the wafer were compared to LPRT readings temperature readings that viewed bar Si/SiO2. We found differences of up to 36 C at 900 C in the LPRT measurements due to the low emissivity films. A model of the wafer temperature measurement is presented to provide an insight into the effects of wafer emissivity on LPRT measurements in RTP tools.
Proceedings Title
Advanced Thermal Processing of Semiconductors, International Conference | 9th | | IEEE
Volume
2001
Issue
9th
Conference Dates
September 1, 2001
Conference Title
IEEE International Conference on Advanced Thermal Processing of Semiconductors

Keywords

emissivity, in situ calibration, light pipe thermometer, radiometry, rapid thermal processing, thin-film thermocouples

Citation

Kreider, K. , Allen, D. , Chen, D. , DeWitt, D. , Meyer, C. and Tsai, B. (2001), Effects of Wafer Emissivity on Light-Pipe Rediometry in RTP Tools, Advanced Thermal Processing of Semiconductors, International Conference | 9th | | IEEE (Accessed April 21, 2024)
Created September 1, 2001, Updated February 17, 2017