Effects of Wafer Emissivity on Light-Pipe Rediometry in RTP Tools

Published

September 1, 2001

Author(s)

Kenneth G. Kreider, David W. Allen, D H. Chen, D P. DeWitt, Christopher W. Meyer, Benjamin K. Tsai

Abstract

We investigated the effect of different wafer emissivities and the effect of low emissivity films on rapid thermal processing (RTP) wafer temperature measurements using lightpipe radiation thermometers (LPRTs). These tests were performed in the NIST RTP test bed. We used a NIST thin-film thermocouple (TFTC) calibration wafer to calibrate the LPRTs in situ. The measurements of LPRTs viewing Au and Pt thin film spots in the center of the wafer were compared to LPRT readings temperature readings that viewed bar Si/Si_O2. We found differences of up to 36 C at 900 C in the LPRT measurements due to the low emissivity films. A model of the wafer temperature measurement is presented to provide an insight into the effects of wafer emissivity on LPRT measurements in RTP tools.

Proceedings Title

Advanced Thermal Processing of Semiconductors, International Conference | 9th | | IEEE

Volume

2001

Issue

9th

Conference Dates

September 1, 2001

Conference Title

IEEE International Conference on Advanced Thermal Processing of Semiconductors

Pub Type

Conferences

Keywords

emissivity, in situ calibration, light pipe thermometer, radiometry, rapid thermal processing, thin-film thermocouples

Citation

Kreider, K. , Allen, D. , Chen, D. , DeWitt, D. , Meyer, C. and Tsai, B. (2001), Effects of Wafer Emissivity on Light-Pipe Rediometry in RTP Tools, Advanced Thermal Processing of Semiconductors, International Conference | 9th | | IEEE (Accessed April 24, 2024)