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Effect of Thermal Ramping Conditions on Defect Formation in Oxygen Implanted Silicon-on-Insulator Material

Published

Author(s)

S. J. Krause, J Park, J. H. Lee, M. K. El-Ghor, Peter Roitman
Proceedings Title
Proc., IEEE International SOI Conference
Conference Dates
October 6-8, 1992
Conference Location
Ponte Vedra Beach, FL, USA

Citation

Krause, S. , Park, J. , Lee, J. , El-Ghor, M. and Roitman, P. (1992), Effect of Thermal Ramping Conditions on Defect Formation in Oxygen Implanted Silicon-on-Insulator Material, Proc., IEEE International SOI Conference, Ponte Vedra Beach, FL, USA (Accessed February 27, 2024)
Created December 30, 1992, Updated October 12, 2021