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The Effect of Stress Interruption and Pulsed Biased Stress on Ultra-Thin Gate Dielectric Reliability

Published

Author(s)

Bin Wang, John S. Suehle, Eric M. Vogel, J B. Bernstein

Abstract

We studied the effects of stress interruption on the time-dependent dielectric breakdown (TDDB) Life distributions of 2.0 nm oxynitride gate dielectric films. TDDB tests using two different breakdown detection techniques were conducted at several gate voltages. Additional tests were conducted using unipolar and bipolar pulsed bias with pulse repetition frequencies up to 100 KHz to study the effects of pulsed bias on the lifetime of 2 nm films. Our results show that (1) stress interruption longer than 1s does not affect the defect generation and TDDB life distributions, (2) both current noise and the increase in low-voltage stress induced leakage current (SILC) detection techniques provide similar failure statistics for ultra-thin SiO2 and (3) TDDB lifetime for ultra-thin gate dielectrics under unipolar biased stress do not substantially depend on pulse repetition frequencies less than 1 MHz, (4) however, we also report that TDDB lifetime for ultra-thin gate dielectrics under bipolar biased stress exhibit a frequency dependence.
Proceedings Title
2000 IIEEE International Integrated Reliability Workshop Final Report
Conference Dates
October 23-25, 2000
Conference Location
Lake Tahoe, CA, USA

Keywords

reliability, TDDB, unipolar bipolar, SILC, breakdown detection

Citation

Wang, B. , Suehle, J. , Vogel, E. and Bernstein, J. (2000), The Effect of Stress Interruption and Pulsed Biased Stress on Ultra-Thin Gate Dielectric Reliability, 2000 IIEEE International Integrated Reliability Workshop Final Report, Lake Tahoe, CA, USA (Accessed June 13, 2024)

Issues

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Created December 30, 2000, Updated October 12, 2021